Hola,
¿eres nuevo aquí?

Regístrate gratis y conecta tu empresa con financiación pública, partners y proyectos.

Tengo cuenta

Regístrate

Ver video

DYNAMISM

Financiado

Dynamic Properties of Ferroelectric III V MOSFETs

The discovery of ferroelectric characteristics in annealed HfO2–based films opens a wide range of applications not only in memory and logic, but the results will enable new scientific directions for instance in reconfigurable elec... ver más

31/08/2026

LUNDS UNIVERSITET

3M€

Presupuesto del proyecto: 3M€

Líder del proyecto

LUNDS UNIVERSITET No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Ver 2 Participantes

Financiación concedida El organismo H2020 notifico la concesión del proyecto el día 2021-06-28

ERC-2020-ADG: ERC ADVANCED GRANT

I+D

Cerrada hace 4 años

0% 100% 100%

2 Participantes

LUNDS UNIVERSITET

2.50M€ | Lider

URALITA SISTEMAS DE TUBERIAS

435.30K€ | Participante

Conecta tu I+D

¿Tienes un proyecto y buscas un partner? Gracias a nuestro motor inteligente podemos recomendarte los mejores socios y ponerte en contacto con ellos. Te lo explicamos en este video

Proyectos interesantes

TED2021-130453B-C21 ESCRITURA OPTICA EN MATERIALES FERROELECTRICOS COMPATIBLES C... 196K€ Cerrado

PDC2023-145874-I00 Materiales con funcionalidad eléctrica, magnética, óptica o... 180K€ Cerrado

MODERN Multiferroic Oxide 2DEgs for Reconfigurable nonvolatile memo... 173K€ Cerrado

MEFF Enhancement of Memory- and Energy-related Properties of Fluo... 165K€ Cerrado

LUCIOLE Layering, Understanding, Controlling and Integrating Ferroe... 2M€ Cerrado

OSE-Ferroelectrics Overturning Size Effects in Ferroelectric Thin Films 162K€ Cerrado

Duración del proyecto: 62 meses Fecha Inicio: 2021-06-28
Fecha Fin: 2026-08-31

Líder del proyecto

LUNDS UNIVERSITET No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 3M€

Descripción del proyecto The discovery of ferroelectric characteristics in annealed HfO2–based films opens a wide range of applications not only in memory and logic, but the results will enable new scientific directions for instance in reconfigurable electronics. So far, ferroelectric films have been investigated in metal-insulator-metal structures suitable for back-end-of-line integration. They have also been introduced onto Si and two-dimensional materials. However, there is a gap of knowledge with lack of science and technology for integration of HfO2–based ferroelectric films on III-V channel materialswhere the increased permittivity will improve electrostatics. III-V transistors hold a key position for high-performance millimetre wave electronics. The high electron mobility in III-V materials contributes to a high transconductance that enables high unity-current-gain cut-off frequency and unity-power-gain cut-off frequency, fT and fmax, more than a factor 3 higher than competing Si MOSFET technologies. The wide options for heterostructure design have enabled III-V steep-slope transistors for low-power electronics operating down to 30 mV/dec without hysteresis . To research for the first time ferroelectric films integrated on high-performance III-V devices at technology-relevant dimensions, we will use our demonstrated integration of Hf0.5Zr0.5O2 on InAs: - Establishing the best strategy to integrate ferroelectric gate-stacks on III-V materials with strong polarization and long endurance. - Characterizing the dynamic properties with non-volatile functionality of ferroelectric films integrated on III-V transistor channels. - Investigating ferroelectric III-V MOSFETs for future applications including millimeter-wave devices, cryogenic electronics, Negative Capacitance FET (NC-FET) circuitry, and Ferroelectric Tunnel Junctions (FTJs). Combined, the new science and technology will enable novel high-performance devices as well as reconfigurable millimetre-wave electronics.

Conecta tu I+D

Entra hoy

¿Olvidé mi contraseña?

Financiación

Empresas

CTIs/Universidades

Proyectos

Investigadores