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InGaNious: Next-Generation Indium Gallium Nitride Micro LEDs
HEXAGEM AB
processed a
HORIZON EUROPE:
HORIZON-EIC-2022-ACCELERATOR-01
Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high...
2022-12-13 - 2025-01-31 | financed
2022-12-13 - 2025-01-31 | financed
YESvGaN: Vertical GaN on Silicon Wide Band Gap Power at Silicon Cost
HEXAGEM AB
participó en un
H2020:
H2020-ECSEL-2020-2-RIA-two-stage
YESvGaN targets a new low-cost wide band gap (WBG) power transistor technology for enabling high-efficiency power electronic systems in the...
2021-05-12 - 2024-10-31 | financed
2021-05-12 - 2024-10-31 | financed
eleGaNt: The first technology enabling large scale gallium nitride industrialisation for mainstream power ele...
HEXAGEM AB
processed a
H2020:
H2020-EIC-SMEInst-2018-2020
As the world becomes digitalized, the need for more energy efficient, faster and better performing Electronic Components and Systems (ECS) b...
2019-07-23 - 2021-11-30 | financed
2019-07-23 - 2021-11-30 | financed
eleGaNt: The first high performance gallium nitride wafers for mainstream power electronics
HEXAGEM AB
processed a
H2020:
H2020-EIC-SMEInst-2018-2020
As the world becomes digitalized, the need for more energy efficient, faster and better performing Electronic Components and Systems (ECS) b...
2019-02-26 - 2019-03-31 | financed
2019-02-26 - 2019-03-31 | financed
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