InGaNious
Financiado
Next-Generation Indium Gallium Nitride Micro LEDs
Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of...
Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids. These pyramids are then reshaped into truncated hexagonal pyramids, aka InGaN platelets that are just 700 nm wide (effectively a nanoLED) and contain the active micro LED structure after regrowth on the top c-plane of the InGaN platelets.
We can already grow the μLEDs on 2 wafers on a sapphire substrate, and we are developing new methods to grow 4 wafers on a silicon substrate. Our KPIs (pixel size <1 µm, internal quantum efficiency >3.5%, FWHM <50 nm, etc.) already outcompete current commercial options for sub-2 µm-pixel size.
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Duración del proyecto: 25 meses
Fecha Inicio: 2022-12-13
Fecha Fin: 2025-01-31
Fecha Fin: 2025-01-31
Línea de financiación: concedida
El organismo HORIZON EUROPE notifico la concesión del proyecto el día 2022-12-13
Línea de financiación objetivo
El proyecto se financió a través de la siguiente ayuda:
HORIZON-EIC-2022-ACCELERATOROPEN-01:
EIC Accelerator Open
Cerrada
hace 1 año
Presupuesto
El presupuesto total del proyecto asciende a
3M€
Líder del proyecto
HEXAGEM AB
No se ha especificado una descripción o un objeto social para esta compañía.
Perfil tecnológico
TRL
4-5
Perfil tecnológico
TRL
4-5