ANVIL SEMICONDUCTORS LTD
Desconocido
CHALLENGE: 3C SiC Hetero epitaxiALLy grown on silicon compliancE substrates and 3C SiC substrates for sustaiNab...
ANVIL SEMICONDUCTORS LTD
participó en un
H2020:
H2020-NMBP-2016-2017
Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within...
2016-11-09 - 2021-06-30 | Financiado
2016-11-09 - 2021-06-30 | Financiado
3C-SiC Si: Development of a new disruptive semiconductor technology to produce more efficient smaller lighter...
ANVIL SEMICONDUCTORS LTD
tramitó un
H2020:
H2020-SMEInst-2016-2017
Anvil Semiconductors has developed a unique technology to enable the production of Silicon Carbide (SiC) power switches at a similar cost to...
2016-05-13 - 2016-09-30 | Financiado
2016-05-13 - 2016-09-30 | Financiado
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