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EUIN2017-88844

Financiado

QUANTUM SEMICONDUCTOR TECHNOLOGIES BASED ON ANTIMONIDES

INAS AND ALSB FORM TOGETHER WITH GASB THE SO-CALLED 6,1 ANGSTROM FAMILY, WITH A VERY SIMILAR LATTICE CONSTANT, THESE COMPOUNDS CAN BE STACKED AND OR ALLOYED TO FABRICATE UNSTRAINED SEMICONDUCTOR HETEROSTRUCTURES WHOSE FUNDAMENTA... ver más

01/01/2017

CSIC

25K€

Presupuesto del proyecto: 25K€

Líder del proyecto

AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGA... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 2-3 | 552M€

Financiación concedida El organismo AGENCIA ESTATAL DE INVESTIGACIÓN notifico la concesión del proyecto el día 2017-01-01 No tenemos la información de la convocatoria

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CSIC

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AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGA... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 2-3 | 552M€

Presupuesto del proyecto 25K€

Descripción del proyecto INAS AND ALSB FORM TOGETHER WITH GASB THE SO-CALLED 6,1 ANGSTROM FAMILY, WITH A VERY SIMILAR LATTICE CONSTANT, THESE COMPOUNDS CAN BE STACKED AND OR ALLOYED TO FABRICATE UNSTRAINED SEMICONDUCTOR HETEROSTRUCTURES WHOSE FUNDAMENTAL BAND-GAP COVER AN SPECTRAL (ENERGY) RANGE FROM 3,5 MICROMETERS (0,354 EV) TO 0,77 MICROMETERS (1,615 EV): THE LARGEST ENERGY SPAN OF ALL III-V LATTICE-MATCHED FAMILIES, THEY ALSO HAVE, TOGETHER WITH INSB, THE LARGEST ELECTRON MOBILITIES, THE HIGHEST ELECTRONIC G-FACTORS AND THE BIGGEST SPIN-ORBIT COUPLING OF ALL III-V SEMICONDUCTORS, ALL THESE CHARACTERISTICS ARE OF FUNDAMENTAL CHARACTER AND GIVE ANTIMONY-BASED SEMICONDUCTORS MAJOR POTENTIAL FOR THE FUTURE OF ELECTRONICS AND OPTOELECTRONICS, AND BEYOND TO QUANTUM INFORMATION TECHNOLOGIES, OUR GROUPS ARE INDEPENDENTLY RENOWNED FOR THE GROWTH, CHARACTERIZATION AND/OR MODELLING OF SEMICONDUCTOR NANOSTRUCTURES AND HETEROSTRUCTURES WITH SEVERAL PIONEERING WORKS IN THE FIELD, WITHIN THIS PROJECT WE AIM TO SHARE CAPACITY AND KNOWLEDGE TO EXPLOIT THE UNIQUE PROPERTIES OF III-SBS AND CONTRIBUTE TO THE ADVANCEMENT OF THE FOLLOWING OUTSTANDING TECHNOLOGICAL CHALLENGES:- DEVELOP STRAIN ENGINEERED MULTIJUNCTION PHOTOVOLTAIC SOLAR CELLS BASED ON THE LARGE TUNEABILITY OF III-SB,- DEVELOP NEAR-INFRARED (NIR) LASERS FOR LONG-DISTANCE FIBRE TELECOMMUNICATIONS USING SI/GAAS HYBRID TECHNOLOGIES- DEVELOP SOLID-STATE SPIN-QBITS WITH SLOW-DEPHASING AND ULTRAFAST CONTROL THROUGH THE LARGE SPIN-ORBIT COUPLING OF III-SB,IMM-CSIC AND ITS PARTNERS ARE ALREADY LEADING MANY OF THESE ACTIVITIES AND WILL BUILD A CONSORTIUM WITH RESEARCHERS FROM ACADEMIA AND COMPANIES ACROSS EUROPE TO PROMOTE THEIR RESEARCH THOROUGH THE FORTHCOMING MSCA-ITN CALLS, SEMICONDUCTOR SCIENCE AND TECHNOLOGY\ANTIMONIDE COMPOUNDS\MULTIJUNCTION SOLAR CELLS\SI/GAAS INTEGRATION\OPTICAL TELECOMMUNICATIONS\LONG WAVELENGTH LIGHT SOURCES AND DETECT\INTEGRATED QUANTUM PHOTONIC TECHNOLOGIES

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