Perovskite GaAs hybrid structures towards enhanced optoelectronic properties
OPTOHYB focuses on studying the carrier localization (CL) in a new hybrid structure namely halide perovskites/GaAs for photodetection application. Understanding the CL phenomenon in this hybrid structure could provide insights tow...
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PID2020-120484RB-I00
PEROVSKITAS SEMICONDUCTORAS INTEGRADAS EN ESTRUCTURAS FOTONI...
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Descripción del proyecto
OPTOHYB focuses on studying the carrier localization (CL) in a new hybrid structure namely halide perovskites/GaAs for photodetection application. Understanding the CL phenomenon in this hybrid structure could provide insights towards enhancing/controlling the optoelectronic properties. The idea consists of detecting and controlling the CL in the hybrid heterojunction and orient it towards photodetection devices. The phenomenon can be generated, either, randomly by strain, composition, size, and diffusion fluctuations, or, controllably by doping. The CL affects the bandgap (creating band-tails states and optical transitions) which affects the carrier lifetime. The experimental treatment of the phenomenon will be performed optically by the mean of steady-state photoluminescence (PL) and the time-resolved photoluminescence (TRPL) to evaluate the CL signatures. The obtained results will be correlated with morphological and structural observations to qualitatively understand the luminescence mechanisms in the new hybrid structure. To realize OPTOHYB's goal, for the first time, a quantitative study by modeling the PL features and the decay time will be performed using the Localized State Ensemble model (LSE) and the generalized model for TRPL. The newly obtained parameters will allow the control of the CL's evolution versus the ex- and/or in-situ conditions. The successful execution of this proposal will create a new platform with controllable band-tail state formation and carriers dynamic related to the CL phenomenon. Therefore, slowing the charge carrier lifetime due to the carrier hopping between different states in the band-tail, which is beneficial for photodetection. Finally, the fabrication of a photodetector based on halide perovskites/GaAs heterostructure prototype will be performed. The efficiency of the prototype will be checked regarding the possible engineering of the CL and its effect on the prototype and the way on how we can exploit it.