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OSIRIS

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Cerrado

Open silicon based research platform for emerging devices

The OSIRIS proposal will address the crucial and ultimately strategic area for the future emerging nanoelectronics, i.e. how structures and devices actually will be fabricated as physical dimensions approaches a few nanometer mini... ver más

31/05/2014

KTH

2M€

Presupuesto del proyecto: 2M€

Líder del proyecto

KUNGLIGA TEKNISKA HOEGSKOLAN No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Financiación concedida El organismo FP7 notifico la concesión del proyecto el día 2014-05-31 No tenemos la información de la convocatoria

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Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

1 Participantes

KTH

0.00€ | Lider

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Líder del proyecto

KUNGLIGA TEKNISKA HOEGSKOLAN No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 2M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto The OSIRIS proposal will address the crucial and ultimately strategic area for the future emerging nanoelectronics, i.e. how structures and devices actually will be fabricated as physical dimensions approaches a few nanometer minimum feature size. The project title is Open silicon based research platform for emerging devices and indicates that many of the future emerging devices will be based on a silicon fabrication base platform but may not be fully based on silicon as the active semiconductor material. Over the past 10 years this research team has established a versatile fabrication technology platform in excellent condition to open up a variety of new technologies to explore nanometer minimum feature size in realizable electrical repeatable devices structures. The proposed project has five different focus areas outlined. It covers a broad range of critical research issues that can be foreseen as groundbreaking topics for the period beyond 2015. the different topics addressed are; 1) Three dimensional FET nanostructures based on SiNW and GeNW with advanced configuration. 2) New applications of SiNW with build-in strain for fast silicon-base optoelectronic devices. 3) Low frequency noise in advanced nanoelectronic structures 4) THz devices for IR-detection 5) Bio-sensor nanoelectronics for extreme bio-molecule sensitivity and real time detection of DNA. These areas are carefully chosen to assemble the right mix with predictable research success and with a few areas that can be called high gain/high risk. In particular we want to mention that focus area 2 and 4 have a great potential impact when successful but also at a certain higher risk for a more difficult implementation in future devices. There is in no cases any risk that the research will not generate high quality scientific results.

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