QDnEuroMemory
Financiado
III-Sb Quantum-Dot (QD) memory devices for applications in neuromorphic circuits
The current exponential growth of energy consumption by electronic devices is not sustainable in the long term and has detrimental effects on global climate change, it requires solutions to reduce energy waste. One novel approach...
The current exponential growth of energy consumption by electronic devices is not sustainable in the long term and has detrimental effects on global climate change, it requires solutions to reduce energy waste. One novel approach is the Artificial Neural Network (ANN), which is more efficient in performing several tasks as learning, pattern recognition and vision than the usual electronics and sequential algorithms. However, ANN lacks specific hardware to reach its potential. Recently, a lot of effort has been done to find memory devices to implement truly efficient neuromorphic hardware. High endurance and retention time, and low write energy, low write time and voltage are required. This research program proposes to create these memory devices with III-Sb compound semiconductor nanostructures since they are expected to have all these properties. In addition, their optoelectronic properties will allow the manipulation of memory states using light, which will provide unrivaled functionalities to the ANN that use these novels III-Sb memories.
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Duración del proyecto: 34 meses
Fecha Inicio: 2022-07-26
Fecha Fin: 2025-05-31
Fecha Fin: 2025-05-31
Línea de financiación: concedida
El organismo HORIZON EUROPE notifico la concesión del proyecto el día 2022-07-26
Línea de financiación objetivo
El proyecto se financió a través de la siguiente ayuda:
HORIZON-MSCA-2021-PF-01-01:
MSCA Postdoctoral Fellowships 2021
Cerrada
hace 3 años
Presupuesto
El presupuesto total del proyecto asciende a
212K€
Líder del proyecto
UNIVERSITE DE MONTPELLIER
No se ha especificado una descripción o un objeto social para esta compañía.
Perfil tecnológico
TRL
4-5
Perfil tecnológico
TRL
4-5