INTERFAST
Financiado
Gated INTERfaces for FAST information processing
INTERFAST will develop a novel technological platform for the voltage control of interfacial magnetism. The key idea is to manipulate, via a gate, the hybrid states at the interface between a magnetic material and an organic layer...
INTERFAST will develop a novel technological platform for the voltage control of interfacial magnetism. The key idea is to manipulate, via a gate, the hybrid states at the interface between a magnetic material and an organic layer, in a way to affect the effective spin-orbit coupling at such interface. This will allow us to actively control the interfacial magnetism of a wide range of magnetic and supporting compounds, thus providing a universal platform, which is not specific of the rare magnets having massive voltage-control magneto-crystalline anisotropy coefficients. INTERFAST will demonstrate the applicability of this technology to a range of key spintronic functions, encompassing voltage control of magnetisation reversal at fJ/bit energy cost, drastic reduction of the spin-orbit-torque switching currents, and ultrafast THz information processing in all-metallic spintronic devices aided by gateable hybridisation unit.
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Duración del proyecto: 45 meses
Fecha Inicio: 2021-01-19
Fecha Fin: 2024-10-31
Fecha Fin: 2024-10-31
Línea de financiación: concedida
El organismo H2020 notifico la concesión del proyecto el día 2024-10-31
Línea de financiación objetivo
El proyecto se financió a través de la siguiente ayuda:
FETOPEN-01-2018-2019-2020:
FET-Open Challenging Current Thinking
Cerrada
hace 6 años
Presupuesto
El presupuesto total del proyecto asciende a
3M€
Líder del proyecto
CONSIGLIO NAZIONALE DELLE RICERCHE
No se ha especificado una descripción o un objeto social para esta compañía.
Perfil tecnológico
TRL
4-5
Perfil tecnológico
TRL
4-5
461.84K€ |
Participante
395.88K€ |
Participante