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Conduction Mechanisms in Advanced MOS Technologies

"Silicon-based technologies are approaching their physical limits, and technology breakthroughs, in terms of materials and processes, will be required as device sizes reach the nano-scale frontier. To face these challenges, a new... ver más

31/08/2014

TECHNION ISRAEL I...

250K€

Presupuesto del proyecto: 250K€

Líder del proyecto

TECHNION ISRAEL INSTITUTE OF TECHNOLOGY No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Financiación concedida El organismo FP7 notifico la concesión del proyecto el día 2014-08-31 No tenemos la información de la convocatoria

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TECHNION ISRAEL INSTITUTE O...

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Líder del proyecto

TECHNION ISRAEL INSTITUTE OF TECHNOLOGY No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 250K€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto "Silicon-based technologies are approaching their physical limits, and technology breakthroughs, in terms of materials and processes, will be required as device sizes reach the nano-scale frontier. To face these challenges, a new generation of devices based on a clever combination of selected materials is currently under consideration worldwide. The aim of this project is to investigate the conduction mechanisms, in connection with degradation and breakdown characteristics, of Metal Gate/High-K structures on III-V substrates intended for applications in future MOS transistors. This aspect is primary obstacle to the successful incorporation into mainstream semiconductor process. To the date, no systematic study about these topics in such advanced structures has been carried out. The project covers all aspect of conduction in the MG/HK/III-V stacks, fresh, stressed and, finally the breakdown event and the conduction over the degraded stacks. The electrical characterization will provide relevant information to contribute to the elaboration of models that are able to predict the life time of devices more accurately. Leading the transition to advance electronics is a challenge for applied research as it requires specific technologies platforms. That is actually why this proposal is highly interesting. This research project would contribute to achieve excellence in the filed and consequently would attract the interest of the industrial sector of the EU. This proposal aims to define advantages and constrains of advance MG/HK/III-V stacks since they will play a relevant role in the next generation of CMOS manufacture process"

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