HIGH-MEMO
Financiado
Ultra-High Speed memories for unprecedented cloud-computing performance
Static Random-Access Memories (SRAM) are bottlenecks. In IoT devices, they consume significant power when the device is idle. In high performance applications such as telecommunication infrastructure, data centres, and stationary...
Static Random-Access Memories (SRAM) are bottlenecks. In IoT devices, they consume significant power when the device is idle. In high performance applications such as telecommunication infrastructure, data centres, and stationary devices they limit the processor performance. Xenergic’s mission is to design SRAM that revolutionise system-on-chip power efficiency. For IoT devices, we design SRAM that reduce energy consumption by 70-90% when the device is idle. For high performance applications our SRAM have the potential to reach 2-3x higher speed and to reduce energy consumption by 30% compared to competing SRAM. To capitalise on a >€280B annual market opportunity, we provide our customers with IP on SRAM design tailored to their requirements and profit from royalties on their sales. Our ultra-low energy memories are gaining strong traction from leading semiconductor companies. Now, we seek an investment from the EIC Accelerator to make our ultra-high-speed memories market-ready.
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Duración del proyecto: 18 meses
Fecha Inicio: 2022-09-14
Fecha Fin: 2024-03-31
Fecha Fin: 2024-03-31
Línea de financiación: concedida
El organismo HORIZON EUROPE notifico la concesión del proyecto el día 2024-03-31
Línea de financiación objetivo
El proyecto se financió a través de la siguiente ayuda:
Presupuesto
El presupuesto total del proyecto asciende a
4M€
Líder del proyecto
XENERGIC AB
No se ha especificado una descripción o un objeto social para esta compañía.
Perfil tecnológico
TRL
4-5
Perfil tecnológico
TRL
4-5