Transport layer engineering towards lower threshold for perovskite lasers
Towards demonstrating new electrically pumped lasers based on the emerge metal halide perovskite, it is necessary to sandwich the perovskite thin film into transport layers for the integration of electrical devices. However, it is...
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Información proyecto TLTL
Duración del proyecto: 23 meses
Fecha Inicio: 2022-09-28
Fecha Fin: 2024-09-14
Líder del proyecto
LINKOPINGS UNIVERSITET
No se ha especificado una descripción o un objeto social para esta compañía.
TRL
4-5
Presupuesto del proyecto
223K€
Fecha límite de participación
Sin fecha límite de participación.
Descripción del proyecto
Towards demonstrating new electrically pumped lasers based on the emerge metal halide perovskite, it is necessary to sandwich the perovskite thin film into transport layers for the integration of electrical devices. However, it is challenging to maintain the low threshold when introducing transport layers. The appearance of perovskite/transport layer interfaces, which is absent in most optically pumped perovskite lasers, is even considered as detrimental factors to lasing actions. By carefully integrating the perovskite films into electrical device structures, though reaching very high injection current densities (> 1 kA/cm2), often fails to realize lasing actions. The next urgent milestone towards electrically pumped perovskite lasers would be realization of low threshold when incorporating transport layers. This project has the goal to reduce lasing threshold of perovskite devices through transport layer engineering, a strategy which is the key step towards realizing perovskite lasers. I will take a holistic approach, where two novel strategies are proposed independently. Two objectives will contribute to solve an important challenge on interface engineering towards electrically pumped perovskite lasers.
Objective 1: To reduce the surface recombination loss for low threshold. I will seek effective approaches to passivate perovskite films through transport layer engineering, leading to suppressed radiative and nonradiative recombination loss at perovskite boundaries.
Objective 2: To reduce recombination loss channels caused by hot carriers for low threshold. I will achieve this objective by hot carrier management via selective transport layers, aiming at suppressing hot carrier injection and facilitating hot carrier cooling.