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SpinFerro

Financiado

Spintronics based on Ferroelectrics

Current state of the art technologies demand high density and high performance electronic devices with reduced energy consumption. This stretches the performance limits of Complementary Metal Oxide Semiconductor (CMOS) transistors... ver más

10/11/2026

CEA

212K€

Presupuesto del proyecto: 212K€

Líder del proyecto

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENER... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Financiación concedida El organismo HORIZON EUROPE notifico la concesión del proyecto el día 2024-05-08

HORIZON-MSCA-2023-PF-01-01: MSCA Postdoctoral Fellowships 2023 ExpectedOutcome:Project results are expected to contribute to the following outcomes:

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1 Participantes

CEA

211.75K€ | Lider

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Duración del proyecto: 30 meses Fecha Inicio: 2024-05-08
Fecha Fin: 2026-11-10

Líder del proyecto

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENER... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 212K€

Descripción del proyecto Current state of the art technologies demand high density and high performance electronic devices with reduced energy consumption. This stretches the performance limits of Complementary Metal Oxide Semiconductor (CMOS) transistors technology. Among the many beyond CMOS approaches, one of the most promising routes is the spintronics ecosystem. In the framework of this project, we aim to investigate a beyond CMOS spintronics device recently proposed and called Ferroelectric Spin Orbit (FESO) device, where the spin polarized states of a Rashba interface are manipulated through its proximity with a ferroelectric material. The project’s innovation relies on the exploitation of this effect to transform spin to charge currents in a controllable manner through the reversing a ferroelectric’s polarization, to develop a new in memory computing technology. The FESO technology involves non-volatility, low operating voltage and much lower energy consumption compared to conventional CMOS and other spintronic devices. As a main scientific objective, the researcher will investigate and understand the effect of the ferroelectric layer to FESO devices performance in terms of materials choice, growth quality, dimensions and compatibility to Ferromagnetic materials. The main technological objective is to fabricate a prototype and characterize its operational performance with regards to cutting edge nanoelectronics standards. The results of the project and key performance of the FESO device will be tabulated in a roadmap. During this project the researcher will be trained in advanced Nanofabrication techniques and device characterization. Except from the research skills, the researcher will also gain experience in a series of transferable skills. This project constitutes a perfect opportunity to establish an independent scientific profile at the frontier of nanoelectronics and semiconductor industry, a key field in the framework of major European Commission initiatives.

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