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SingExTr

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Single Exciton Transistor based on van der Waals Heterostructures

The spin degree of freedom of an electron captures the essence of quantum mechanics. Via a phenomenon called Coulomb blockade, electrons can be loaded one-by-one into a microscopic device, and their spin can be probed by electrica... ver más

28/02/2023

HWU

213K€

Presupuesto del proyecto: 213K€

Líder del proyecto

HERIOTWATT UNIVERSITY No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Financiación concedida El organismo H2020 notifico la concesión del proyecto el día 2023-02-28

MSCA-IF-2020: Individual Fellowships

I+D

Cerrada hace 4 años

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Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

1 Participantes

HWU

212.93K€ | Lider

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Duración del proyecto: 24 meses Fecha Inicio: 2021-02-23
Fecha Fin: 2023-02-28

Líder del proyecto

HERIOTWATT UNIVERSITY No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 213K€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto The spin degree of freedom of an electron captures the essence of quantum mechanics. Via a phenomenon called Coulomb blockade, electrons can be loaded one-by-one into a microscopic device, and their spin can be probed by electrical or optical readouts, satisfying some criteria to construct a quantum processor. Unfortunately, electrons interact indirectly with light (photons), essential for ultra-fast coherent control and to communicate the quantum information over long distances. Conversely, an exciton – a quasiparticle consisting of a strongly bound electron-hole pair in a semiconductor – interacts with light very strongly. With the emergence of atomically thin semiconductors which have exciton binding energies and Coulomb interactions ~ 100x larger than traditional semiconductors such as GaAs, it is possible to engineer a single exciton transistor. In this fellowship, I propose to pursue excitonic transport and controlled electrostatic trapping of single excitons. To realize such devices, I will stack atom-thick flakes together to form 2D heterostructures which allow separation of the electron and hole into different layers, creating an interlayer exciton which has a long lifetime, a large permanent dipole, and convenient energy scales. The interlayer excitons can strongly interact with each other, providing the repulsion energy to realize excitonic Coulomb blockade. Success in this endeavor opens a path to realizing novel sources of single photons, entangled photons, and efficient spin-photon interfaces. This Fellowship will offer me the opportunity to acquire new skills regarding magneto-optical spectroscopy, quantum optics, transport device design and fabrication. It builds on my PhD project, where I focused on intralayer excitons in 2D materials and heterostructure fabrication. This project exploits my strong background in material/device preparation and marries it with quantum optics, which is the expertise of host group.

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