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SPEED

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Cerrado

Silicon Carbide Power Technology for Energy Eficient Devices

"Highly efficient Power Electronics (PE) employed in power generation, transmission, and distribution is the prerequisite for the Europe-wide penetration of renewable energies; improves the energy efficiency; increases the power q... ver más

31/12/2017

INAEL

19M€

Presupuesto del proyecto: 19M€

Líder del proyecto

INAEL ELECTRICAL SYSTEMS SA No se ha especificado una descripción o un objeto social para esta compañía.

Fecha límite participación Sin fecha límite de participación.

Ver 17 Participantes

Financiación concedida El organismo FP7 notifico la concesión del proyecto el día 2017-12-31 No tenemos la información de la convocatoria

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Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

17 Participantes

INAEL

983.78K€ | Lider

LUH

489.58K€ | Participante

UNIOVI

531.82K€ | Participante

THE UNIVERSITY OF NOTTINGHAM

691.05K€ | Participante

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Líder del proyecto

INAEL ELECTRICAL SYSTEMS SA No se ha especificado una descripción o un objeto social para esta compañía.

Presupuesto del proyecto 19M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto "Highly efficient Power Electronics (PE) employed in power generation, transmission, and distribution is the prerequisite for the Europe-wide penetration of renewable energies; improves the energy efficiency; increases the power quality and enables continuous voltage regulation, reactive power compensation and automated distribution. It also facilitates the integration of distributed resources like local energy storages, photovoltaic generators, and plug-in electric vehicles. The development of a new generation of high power semiconductor devices, able to operate above 10kV, is crucial for reducing the cost of PE in the above-mentioned applications. The material properties of SiC, clearly superior to those of Si, will lead to enhanced power devices with much better performance than conventional Si devices. However, today´s SiC PE performs rather poorly compared to the predictions and the production costs are by far too high. Pooling world-leading manufacturers and researchers, SPEED aims at a breakthrough in SiC technology along the whole supply chain: • Growth of SiC substrates and epitaxial-layers. • Fabrication of power devices in the 1.7/>10kV range. • Packaging and reliability testing. • SiC-based highly efficient power conversion cells. • Real-life applications and field-tests in close cooperation with two market-leading manu¬facturers of high-voltage (HV) devices. Known and new methodologies will be adapted to SiC devices and optimized to make them a practical reality. The main targets are cost-savings and superior power quality using more efficient power converters that exploit the reduced power losses of SiC. To this end, suitable SiC substrates, epitaxial-layers, and HV devices shall be developed and eventually be implemented in two demonstrators: • A cost-efficient solid-state transformer to support advanced grid smartness and power quality. • A windmill power converter with improved capabilities for generating AC and DC power."

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