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UltimateGaN

Financiado

Cerrado

Research for GaN technologies devices packages and applications to address the...

Research for GaN technologies devices packages and applications to address the challenges of the future GaN roadmap The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technol... ver más

31/10/2022

IFAT

48M€

Presupuesto del proyecto: 48M€

Líder del proyecto

INFINEON TECHNOLOGIES AUSTRIA AG No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Ver 27 Participantes

Financiación concedida El organismo H2020 notifico la concesión del proyecto el día 2022-10-31

ECSEL-2018-2-RIA: H2020-ECSEL-2018-2-RIA

I+D

Cerrada hace 6 años

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Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

27 Participantes

IFAT

1.93M€ | Lider

FRONIUS INTERNATIONAL GMBH

233.38K€ | Participante

TECHNISCHE UNIVERSITAET CHEM...

62.41K€ | Participante

AIXTRON SE

459.32K€ | Participante

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Duración del proyecto: 41 meses Fecha Inicio: 2019-05-10
Fecha Fin: 2022-10-31

Líder del proyecto

INFINEON TECHNOLOGIES AUSTRIA AG No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 48M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto The main objective of UltimateGaN is to safeguard Europe’s leading position in terms of power semiconductors and high performance RF applications by driving an innovative breakthrough change with the next generation of GaN-technologies. Several predecessor projects are the basis for the availability of the first generation of European based GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated. This makes the high potential of GaN clearly evident to overcome the persisting threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage. The new concept of following a vertical approach to address research through the entire supply chain of technology, packaging, reliability and application will enable a significant improvement of efficiency that goes beyond the limits of silicon based semiconductors in combination with packages that fully utilize the shrink-path of power GaN devices and which are not ready as of today. UltimateGaN’s unique approach addresses, among others, the following innovative applications with the scope to enable digitalisation and energy efficiency for 5G, Smart Grids and Smart Mobility that goes hand in hand with a significant reduction of the CO2 footprint: •Extremely efficient server power supply enabling lower energy consumption in data centres •Benchmark Photovoltaic inverters in terms of efficiency and size to foster the use of renewable energies •Affordable 5G-Amplifiers up to mm-wave enabling a faster 5G rollout •GaN powered LIDAR application to enable autonomous driving •Highest efficiency µ-Grid-converters and On-Board Chargers The global state-of-the-art first generation GaN devices are mainly based on US and Asian suppliers. Only a cooperative project like UltimateGaN with European market leaders and world-class researchers can take on the challenges and bring Europe at the forefront in terms of GaN enabled opportunities.

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