Reinventing Power Electronic Architectures for a Fully-Integrated Power Converte...
Reinventing Power Electronic Architectures for a Fully-Integrated Power Converter-on-a-Chip
As the world undergoes an unprecedented transformation towards de-carbonized energy generation and electrification of the transportation sector, there is an increasing need for efficient, compact and lightweight power electronics....
ver más
¿Tienes un proyecto y buscas un partner? Gracias a nuestro motor inteligente podemos recomendarte los mejores socios y ponerte en contacto con ellos. Te lo explicamos en este video
Proyectos interesantes
GaN4AP
GaN for Advanced Power Applications
62M€
Cerrado
LAST POWER
Large area silicon carbide substrates and heteroepitaxial Ga...
16M€
Cerrado
eleGaNt
The first high performance gallium nitride wafers for mainst...
71K€
Cerrado
YESvGaN
Vertical GaN on Silicon Wide Band Gap Power at Silicon Cost
27M€
Cerrado
GaNonCMOS
GaN densily integrated with Si CMOS for reliable cost effec...
7M€
Cerrado
eleGaNt
The first technology enabling large scale gallium nitride in...
3M€
Cerrado
Información proyecto ENRICH
Duración del proyecto: 62 meses
Fecha Inicio: 2023-10-04
Fecha Fin: 2028-12-31
Líder del proyecto
PANEPISTIMIO PATRON
No se ha especificado una descripción o un objeto social para esta compañía.
TRL
4-5
Presupuesto del proyecto
2M€
Fecha límite de participación
Sin fecha límite de participación.
Descripción del proyecto
As the world undergoes an unprecedented transformation towards de-carbonized energy generation and electrification of the transportation sector, there is an increasing need for efficient, compact and lightweight power electronics. However, miniaturization of contemporary energy conversion systems is hindered by the performance limitations of the power devices and the size and weight restrictions of the passive components. The ENRICH project proposes a fundamental reconsideration of the entire electric power conversion chain, by co-design novel multilevel converter topologies with new semiconductor structures, based on wide band gap materials, mainly Gallium Nitride (GaN).
The envisioned system is inspired from the high-power equivalent of a digital-to-analogue converter, directly controlled by a single reference signal (pseudo-analogue control). This is the first attempt to demonstrate the concept of a solid-state selector switch, which is free from magnetic components and allows all switching elements to be connected in parallel with a common source reference, avoiding the burden of multiple voltage-isolation zones.
This radical approach paves the way for true monolithic integration of the entire multilevel inverter on a single chip, in the form of a power processor. The proposed parallel architecture addresses all current integration challenges, such as the crosstalk and back-gating effects, and overcomes the limitations regarding the maximum number of levels. The GaN power processor has huge potential to reach record power densities that are beyond what is currently possible.
The ambitious research spans across the fields of Power Electronics, Material Science and Control Theory, and aims to bring numerous benefits with important technological and socioeconomic impact in the automotive, aerospace and renewable energy generation sectors.