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R2POWER300

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Preparing R2 extension to 300mm for BCD Smart Power

R2POWER300 is committed to challenge the following Objectives: •Development and manufacturing of a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing) •Energy Efficiency and CO2 Reduction megatre... see more

31/12/2018

STMICROELECTRONICS...

8M€

Project Budget: 8M€

Project leader

STMICROELECTRONICS SRL No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

PARTICIPATION DEPralty Sin fecha límite de participación.

Ver 10 Participantes

Financing granted El organismo FP6 notifico la concesión del proyecto The day 2018-12-31

ECSEL-02-2014: ECSEL Key Applications and Essentia... Scope:Specific challenge: Please consult the ECSEL Multi Annual Strategic Plan (MASP) ECSEL-GB-2014....

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characteristics of the participant

Este proyecto no cuenta con búsquedas de partenariado abiertas en este momento.

Private Information

No hay información privada compartida para este proyecto. Habla con el coordinador.

10 Participantes

STMICROELECTRONICS SRL

Leader

PICOSUN OY

N.D. | participant

NANODESIGN

N.D. | participant

BESI NETHERLANDS BV

N.D. | participant

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Project duration: 41 months Date Start: 2015-07-01
End date: 2018-12-31

Project leader

STMICROELECTRONICS SRL No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Project Budget 8M€

participation deadline Sin fecha límite de participación.

Project description R2POWER300 is committed to challenge the following Objectives: •Development and manufacturing of a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing) •Energy Efficiency and CO2 Reduction megatrends.The project aims to achieve the following Goals:1.Set the stage for the future extension to 300mm of the R2 Fab facility located in Agrate Brianza (Italy) - i.e. line’s specification, tools’ evaluation and screening, new process’s optimization and characterization, etc. 2.To evaluate, characterize and optimize the equipments and process necessary to achieve the new BCD10 technology, featuring 90nm lithography, at 300mm wafer size. BCD (i.e. Bipolar + CMOS + DMOS) is a unique smart power technology invented by ST in the mid ‘80s (CMOS’s gate length was 4 m at that time!). As of today BCD is one of the key technology assets of ST and the indefatigable evolution and challenging roadmap makes ST a world-class leader on smart power ICs.3.Advanced System in Packages: some SiP activity will be performed, with specific reference to Sintering based die-attach, thermal analysis and dedicated packaging solution for high density ALD capacitors.

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