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PANACHE

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PANACHE

Pilot line for Advanced Nonvolatile memory technologies for Automotive microControllers, High security applications and general Electronics :The PANACHE project objective is to set-up a pilot line for embedded Flash technology des... see more

02/01/2018

STM CROLLES

225M€

Project Budget: 225M€

Project leader

STMICROELECTRONICS CROLLES 2 SAS No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

PARTICIPATION DEPralty Sin fecha límite de participación.

Ver 18 Participantes

Financing granted El organismo FP6 notifico la concesión del proyecto The day 2018-01-02 We do not have the information of the call

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characteristics of the participant

Este proyecto no cuenta con búsquedas de partenariado abiertas en este momento.

Private Information

No hay información privada compartida para este proyecto. Habla con el coordinador.

18 Participantes

STM CROLLES

Leader

UAB

N.D. | participant

LiveU

N.D. | participant

STMICROELECTRONICS FRANCE

N.D. | participant

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Project duration: 48 months Date Start: 2014-01-02
End date: 2018-01-02

Project leader

STMICROELECTRONICS CROLLES 2 SAS No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Project Budget 225M€

participation deadline Sin fecha límite de participación.

Project description Pilot line for Advanced Nonvolatile memory technologies for Automotive microControllers, High security applications and general Electronics :The PANACHE project objective is to set-up a pilot line for embedded Flash technology design and manufacturing platform for the prototyping of innovative µcontrollers in Europe.The current 40nm technology platform as well as the already defined 55nm technology platform will be developed and consolidated in order to build a solid manufacturing platform on these technology nodes. The project will also extend to build the basic blocks of the technology node after 40nm; with the ambition to achieve a prototyping maturity for a new BEOL based non-volatile memory architecture suitable with the 28 nm node. To achieve this goal of generating high value added semiconductor circuits in Europe in a breakthrough leading edge technology the project will deploy all the necessary activities to bring a new technology to an early industrial maturity stage. These activities encompass such developments as: technology enhancements for various specific application requirements such as wide temperature range and reliability, high security requests, high flexibility…, design enablement allowing first time silicon success, prototyping demonstrator products in the different application areas: Automotive, Consumer/Industrial, Secure and Medical, insuring reliability of technology and designs.

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