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NoVoSiP

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Nano Voids in Strained Silicon for Plasmonics

The project aims at exploring the use of nanovoids and nanodots prepared as plasmonic structures to enhance the efficiency of Si single-crystalline photovoltaic (PV) devices. Fabrication and experimental investigation of plasmonic... ver más

31/08/2015

BSU

15K€

Presupuesto del proyecto: 15K€

Líder del proyecto

BELARUSIAN STATE UNIVERSITY No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Financiación concedida El organismo FP7 notifico la concesión del proyecto el día 2015-08-31 No tenemos la información de la convocatoria

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Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

1 Participantes

BSU

0.00€ | Lider

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Líder del proyecto

BELARUSIAN STATE UNIVERSITY No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 15K€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto The project aims at exploring the use of nanovoids and nanodots prepared as plasmonic structures to enhance the efficiency of Si single-crystalline photovoltaic (PV) devices. Fabrication and experimental investigation of plasmonic structures in strained Si/SiGe multilayered structures will be carried to enhance light harvesting in solar cells due to both near-field and far-field effects. The main idea behind the production of nanovoids and nanodots is based on the ability of compressively strained thin SiGe alloy layers, incorporated in a Si matrix during epitaxial growth, to collect small-sized molecules (H, He, C) or vacancies, induced by irradiation. Further, thermal treatment results in the formation of nano-voids which are strictly assembled within the strained SiGe layers. The following key processes will be used: Molecular beam epitaxy of strained Si/SiGe/Si structures followed by irradiation with light ions (hydrogen, carbon) and rapid thermal treatment. This structure will then be additionally used as a template for segregation and self-assembling of metallic or carbon nanodots. The fundamental investigations of the structural, optical and electronic properties of the strained Si/SiGe layers will be carried out with a range of available methods for structural, electronical and optical characterization. By placing the nanovoids and nanodots in a highly doped emitter layer close enough to the p-n-junction that the near-fields will extend into the depletion layer, the effects of near-fields will be obtained. This will give a contribution to the electron-hole pair generation, and this will be additional to the far field effects. Being formed periodically, strained layers with self-assembled nanovoids or nanodots will display fundamentally unusual electronic and optical properties. These effects have not previously been experimentally studied in a solar cell configuration. The present system offers a unique configuration for such investigation.

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