Multiferroic Oxide 2DEgs for Reconfigurable nonvolatile memory Nanodevices (MODE...
Multiferroic Oxide 2DEgs for Reconfigurable nonvolatile memory Nanodevices (MODERN)
The main idea of MODERN project is the realization of novel Ferroelectric (FE) and multiferroic oxide two-dimensional electron gases (2DEGs) characterized by a metal-insulating transition as function of the FE-polarization directi...
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Información proyecto MODERN
Duración del proyecto: 26 meses
Fecha Inicio: 2023-07-07
Fecha Fin: 2025-09-30
Fecha límite de participación
Sin fecha límite de participación.
Descripción del proyecto
The main idea of MODERN project is the realization of novel Ferroelectric (FE) and multiferroic oxide two-dimensional electron gases (2DEGs) characterized by a metal-insulating transition as function of the FE-polarization direction. By locally switching-on and off the 2DEG using a scanning probe, devices with arbitrary nanoscale geometry will be demonstrated and sketched in a non-volatile manner, to realize prototype FE field effect transistors (FET), spin-FET and spin-charge conversion circuits for the generation and detection of spin-currents, all operating at ultra-low power energy density.
To achieve the objective, two heterostructures platforms will be studied and realized:
1. K0.5Na0.5NbO3 (KNN)/KTaO3 2DEG, where KNN is a well-known lead-free FE layer and KTaO3 is an oxide characterized by a large SOC (up to 0.4 eV), that develops an interfacial 2DEG. Here KNN can both act as FE-layer with large polarization (up to 30 µC/cm2) and as interfacial donor of carriers by Nb-doping of the interface.
2. Delta-doped LAO/SrVO3 (down to 2 unit cells (UCs))/SrTiO3. Here, two UCs of VO2-terminated SrVO3 have been theoretically predicted to become a 2D multiferroic, with in plane FE order and an antiferromagnetic magnetic order