Microelectronic Single Photon 3D Imaging Arrays nfor low light high speed Safety...
Microelectronic Single Photon 3D Imaging Arrays nfor low light high speed Safety and Security Applications
MiSPIA will develop beyond state-of-the-art photonics technology for array imagers of smart-pixels able to detect single photons. Intelligent in-pixel pre-processing will simultaneously provide ultra high sensitivity (single-photo...
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Información proyecto MiSPIA
Líder del proyecto
POLITECNICO DI MILANO
No se ha especificado una descripción o un objeto social para esta compañía.
TRL
4-5
Presupuesto del proyecto
3M€
Fecha límite de participación
Sin fecha límite de participación.
Descripción del proyecto
MiSPIA will develop beyond state-of-the-art photonics technology for array imagers of smart-pixels able to detect single photons. Intelligent in-pixel pre-processing will simultaneously provide ultra high sensitivity (single-photon level), very high frame-rate (up to 200,000fps) and advanced multi-spectral (300-900nm) three-dimensional (3D) distance ranging and two-dimensional (2D) imaging of fast moving objects. MiSPIA detectors will be used in two key applications: long-range (200-1,000m) 2D and 3D active identification in low light level surveillance operations; and very fast (over 200fps) short-range (10-50m) 3D monitoring in automotive pre-crash safety systems. Instead of (slow and noisy) CCDs and CMOS active pixels (with poor sensitivity and noisy electronics), MiSPIA will exploit the ultimate performances of truly-single photon detectors: the Single-Photon Avalanche Diodes (SPAD).MiSPIA imagers will be based on four different SPAD smart-pixels: "photon-counting" pixels for 2D imaging; LIDAR pixels for 3D direct "time-of-flight" (dTOF); two different phase-sensitive pixels for 3D indirect time-of-flight (iTOF) depth acquisitions. Full-size imager chips will be manufactured, characterized and eventually integrated into two 3D ranging cameras deployed into the two end-users applications for validation.MiSPIA technologies will be both highly-advanced and cost-effective: a high-voltage 0.35µm CMOS processing for front-side illuminated imagers; and a new flipped-chip Silicon-on-Insulator (SOI) CMOS technology for back-side illuminated imagers. Both will prove beyond state-of-the art co-integration of photonic SPAD detectors and CMOS microelectronics for intelligent and dense 2D imaging and 3D ranging high-performance cameras. Such cameras will provide imaging at the quantum limit and on-chip pre-processing at the most effective speed at a drastic reduction of manufacturing costs, down to 5€ per imager chip.The developments of the MiSPIA Project will be published on the official website www.mispia.eu.