Manganese Nitride based sub-THz Ultra High Frequency Spin Hall Nano Oscillators
Spin Hall nano-oscillators(SHNOs) have garnered significant attention in recent years due to their high frequencies, nanoscale size, ultra-fast/wide frequency tunability, and potential to replace CMOS-based oscillators. Here, an i...
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Información proyecto MANGA
Duración del proyecto: 32 meses
Fecha Inicio: 2024-04-05
Fecha Fin: 2026-12-31
Líder del proyecto
GOETEBORGS UNIVERSITET
No se ha especificado una descripción o un objeto social para esta compañía.
TRL
4-5
Presupuesto del proyecto
207K€
Fecha límite de participación
Sin fecha límite de participación.
Descripción del proyecto
Spin Hall nano-oscillators(SHNOs) have garnered significant attention in recent years due to their high frequencies, nanoscale size, ultra-fast/wide frequency tunability, and potential to replace CMOS-based oscillators. Here, an input current with spin hall effect is used to generate oscillations in a magnetic material ranging from a few hundreds of MHz to tens of GHz. As many existing and future radio protocols and applications will use frequencies well above 50 GHz, pushing the SHNO operating frequencies much higher would be of tremendous value. One way to increase the operating frequencies of SHNOs is by replacing the magnetic materials from ferromagnets to ferrimagnets. The magnetic properties of ferrimagnets make it a perfect candidate to be used for high frequency SHNOs. MANGA aims to use the Manganese Nitride (Mn4N) family of ferrimagnetic materials made up of light, abundant, cheap and greener elements to realise different types of SHNOs. It will demonstrate sub-THz ultra high frequency SHNOs followed by high frequency exchange spring oscillators by coupling the Mn4N system with other ferromagnetic materials such as Ni/NiFe/CoFeB. The Mn4N system will be studied as the spin source layer to generate oscillations in other magnetic layers. The first objective in MANGA of sub-THz ultra high frequency oscillators will be done by nanofabrication of nanoscale SHNO devices in Mn4N system which will be studied with the help of advanced optical techniques such as Brillouin Light Scattering(BLS) microscopy. For the next objective SHNO devices will be fabricated after the deposition of other magnetic layers on Mn4N layer and studied with various magnetic characterization techniques and BLS microscopy. For the last objective a Copper layer will be inserted between the Mn4N layer another magnetic layer. The spin source properties will be studied with the help of rectangular bar devices and oscillations will be studied with the SHNO devices.