Descripción del proyecto
ULTRA-WIDE-BAND (UWB) TECHNOLOGY HAS BEEN RECENTLY ALLOWED FOR ITS COMMERCIAL OPERATION IN COMMUNICATIONS, THUS, THE USE OF UWB TECHNOLOGY HAS CHANGED DRAMATICALLY IN RECENT YEARS, IN THIS CONTEXT, THE MAIN OBJECTIVE OF THIS PROJECT IS THE APPLICATION OF UWB TECHNOLOGIES TO MEDICAL REMOTE SENSING AND IMAGING BY USING NEW SYSTEM STRUCTURES AND ULTIMATE MICRO AND NANOELECTRONIC DEVICES, WE WILL DESIGN, DEVELOP AND BUILD, STEP-BY-STEP, AN END-USER APPLICATION WITH VERY HIGH SOCIAL IMPACT SUCH AS THE CANCER DIAGNOSIS USING ONE OF THE MOST ADVANCED SEMICONDUCTOR TECHNOLOGIES AVAILABLE NOWADAYS ALL OVER THE WORLD, LETI-FDSOI TECHNOLOGY, THE ACCESS TO THIS TECHNOLOGY WILL BE POSSIBLE THROUGH OUR PARTICIPATION IN THE EUROPEAN NETWORK EUROSOI+ ¿EUROPEAN PLATFORM FOR LOW-POWER APPLICATIONS ON SILICON-ON-INSULATOR TECHNOLOGY¿ (FP7-ICT-2007-1-216373),THE PROJECT IS FOCUSED ON TWO MAIN TOPICS, THE FIRST ONE IS APPLICATION ORIENTED, ITS MAIN OBJECTIVE IS THE DEVELOPMENT OF MICROWAVE MEDICAL IMAGING DEMONSTRATORS, SEVERAL TECHNIQUES HAVE BEEN PROPOSED IN THE LITERATURE USING MICROWAVE IMAGING TECHNIQUES, WE WILL IMPLEMENT DIFFERENT IMAGING TECHNIQUES BASED ON UWB-LIKE SIGNALS AS CHIRP-MCT AND MULTIFREQUENCY CW-MCT, ALTERNATIVELY, NEW TIME DOMAIN TECHNIQUES WILL BE IMPLEMENTED AS, FOR INSTANCE, A MIR SYSTEM USED TO DETECT SOME TYPES OF TUMOURS, SPECIFIC INVERSION TECHNIQUES WILL BE DEVELOPED FOR THESE IMAGING TECHNIQUES, IN A FIRST STEP, STANDARD MICROWAVE LABORATORY EQUIPMENT WITH CUSTOM UWB ANTENNAS, SWITCHING MODULES AND SCANNERS WILL BE USED TO IMPLEMENT THE IMAGING DEMONSTRATORS, IN A SECOND STEP, SOME OF THE CRITICAL PARTS (PULSE GENERATORS, AMPLIFIERS, AND RECEIVERS) WILL BE REPLACED BY MORE INTEGRATED CIRCUITS DEVELOPED IN THE PROJECT IN ORDER TO SHOW THE CAPABILITY TO TRANSFER THE RESULTS TO THE INDUSTRY, THE SECOND TOPIC IS ORIENTED TOWARDS TECHNOLOGICAL ISSUES, THIS TOPIC WILL INVESTIGATE THE ROLE OF NEW DEVICE GEOMETRIES AND MATERIALS FOR THE ADVANCED MINIATURIZATION OF ELECTRONIC DEVICES, BY USING BOTH ESTABLISHED AND EMERGING CHARACTERIZATION TOOLS AND DEVELOPING THE NECESSARY SIMULATION TOOLS, THE TARGET WILL BE THE CHARACTERIZATION OF ULTRATHIN FULLY-DEPLETED SILICON/GERMANIUM-ON-INSULATOR TRANSISTORS, DOUBLE GATE (DG) AND MULTIPLE-GATE (MUGFETS) DEVICES WITH HIGH-K DIELECTRIC AND DIFFERENT CRYSTALLOGRAPHIC ORIENTATIONS THROUGH MAGNETOTRANSPORT MEASUREMENTS, AND THE DEVELOPMENT OF SIMULATION TOOLS CAPABLE OF REPRODUCING AND INTERPRETING THE EXPERIMENTAL RESULTS SUCH THAT THEY CAN BE USED TO GUIDE DEVICE DESIGN, THERE IS A LACK OF COMPACT MODELS COMPATIBLE WITH STANDARD ELECTRONIC AND RF CIRCUIT SIMULATORS, ONE OBJECTIVE OF THIS PROJECT IS TO DEVELOP ANALYTICAL COMPACT MODELS FOR ADVANCED CMOS DEVICES INCLUDING NEW MATERIALS, THESE MODELS WILL BE CALIBRATED WITH NUMERICAL SIMULATED RESULTS FROM THE NUMERICAL TOOLS DEVELOPED IN THE PROJECT AND WITH DC AND RF EXPERIMENTAL MEASUREMENTS OF DEVICES MANUFACTURED WITH FOUNDRY SERVICES AVAILABLE IN THE FRAMEWORK OF THE PROJECT, FINALLY, IN ORDER TO TRANSFER UWB TECHNOLOGY TO THE INDUSTRY, LOW-COST AND HIGH-PERFORMANCE INTEGRATED CIRCUITS MUST BE AVAILABLE, IT IS NECESSARY TO DEVELOP AND DESIGN NEW CIRCUITS FOR UWB SUCH AS MIXERS, VGAS AND LNAS USING ADVANCED CMOS DEVICES, NEW TOPOLOGIES AND CIRCUITS WILL BE STUDIED FOR UWB APPLICATIONS, USING THE FOUNDRY SERVICES AVAILABLE IN THE PROJECT, WE WILL DESIGN SOME PROTOTYPES, UWB\Tomografia de microondas\cancer\modelos compactos\CMOS\Double-Gate\FinFET