Large area silicon carbide substrates and heteroepitaxial GaN for power device a...
Large area silicon carbide substrates and heteroepitaxial GaN for power device applications
Power microelectronics represents an important segment of the semiconductor industry worldwide and is generally characterised by devices with low revenue but high strategic importance. The aim of the ENIAC JU project LAST POWER pr...
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Información proyecto LAST POWER
Líder del proyecto
STMICROELECTRONICS SRL
No se ha especificado una descripción o un objeto social para esta compañía.
TRL
4-5
Presupuesto del proyecto
16M€
Fecha límite de participación
Sin fecha límite de participación.
Descripción del proyecto
Power microelectronics represents an important segment of the semiconductor industry worldwide and is generally characterised by devices with low revenue but high strategic importance. The aim of the ENIAC JU project LAST POWER project is to make the European Union independent from other sources in the design and production of highly-efficient systems for applications controlling electrical power. The project focuses on the development of high-power technologies and devices for both the forthcoming era of pure electrical mobility and a variety of industries which make use of electrical drivers.