Hola,
¿eres nuevo aquí?

Regístrate gratis y conecta tu empresa con financiación pública, partners y proyectos.

Tengo cuenta

Regístrate

Ver video

IBAHMA

Financiado

Cerrado

Ion Beam Applications to High density Memory Archives

Nowadays, safe archival data storage has become an urgent issue. The IBAHMA project concerns a new approach to providing ultra-stable (>50 years), ultra-high density (>1Tbit/sq.in.) data storage for archival applications, using io... ver más

04/01/2012

UNEXE

117K€

Presupuesto del proyecto: 117K€

Líder del proyecto

THE UNIVERSITY OF EXETER No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Financiación concedida El organismo FP7 notifico la concesión del proyecto el día 2012-01-04 No tenemos la información de la convocatoria

0% 100%

Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

1 Participantes

UNEXE

0.00€ | Lider

Proyectos interesantes

MICROHOLAS

Data Science

Electronics

2M€ Cerrado

DNA-FAIRYLIGHTS

Data Science

Nanotechnology

3M€ Cerrado

NEO

Data Science

Materials Scien...

2M€ Cerrado

FASTCOMET

Nanotechnology

Data Science

3M€ Cerrado

3DMAGNANOW

Nanotechnology

Materials Scien...

173K€ Cerrado

MuStMAM

Materials Scien...

Data Science

195K€ Cerrado

Conecta tu I+D

¿Tienes un proyecto y buscas un partner? Gracias a nuestro motor inteligente podemos recomendarte los mejores socios y ponerte en contacto con ellos. Te lo explicamos en este video

Líder del proyecto

THE UNIVERSITY OF EXETER No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 117K€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto Nowadays, safe archival data storage has become an urgent issue. The IBAHMA project concerns a new approach to providing ultra-stable (>50 years), ultra-high density (>1Tbit/sq.in.) data storage for archival applications, using ion-implantation to write nanoscale data into hydrogenated amorphous silicon carbide (a-SiC:H) films. Wide bandgap optical materials, such as a-SiC:H, when exposed to moderate ion doses develop useful optical contrast between regions of different irradiation levels. Absorption coefficient change of 1-2 orders of magnitude can be achieved by ion bombardment with chemically active species, like Ga+. The optical contrast formation mechanism is based on the ion beam induced structural and chemical modification of the implanted material, leading to considerable optical band-gap decrease and hence optical absorption increase. Furthermore, high-resolution digital (or analog) features of about 10 nm minimum size can be generated using focused ion beams (FIB), leading potentially to ultra-high storage densities. The use of Ga+ as an implanted species is of particular interest due to its widespread use in FIB systems and its relatively low melting point, which favours Ga incorporation as dispersed clusters or small nanoparticles in the host material. In this project, the precise nature of Ga incorporation into a-SiC:H films will be investigated, and the role of implantation conditions and post-implantation treatments on the achievable data density, readout contrast and data longevity will be investigated, and optimised conditions determined. In particular the precise role of temperature, both of the SiC 'target' during implantation and of post-implantation annealing treatments in determining the data storage characteristics (density, contrast, longevity) will be determined. The likely limitations for the practical application of this potentially very important new approach to data storage will also be assessed.

Conecta tu I+D

Entra hoy

¿Olvidé mi contraseña?

Financiación

Empresas

CTIs/Universidades

Proyectos

Investigadores