The key to the efficient transmission and conversion of low-carbon electrical energy is the improvement of power electronic devices. Diamond is considered to be the ultimate wide bandgap semiconductor material for applications in...
ver más
¿Tienes un proyecto y buscas un partner? Gracias a nuestro motor inteligente podemos recomendarte los mejores socios y ponerte en contacto con ellos. Te lo explicamos en este video
Proyectos interesantes
PCI2021-121970
VERTICAL GAN ON SILICON: WIDE BAND GAP POWER AT SILICON COST
164K€
Cerrado
TEC2014-54357-C2-2-R
DISPOSITIVO DE ALTO VOLTAJE PARA ELECTRONICA DE POTENCIA VER...
151K€
Cerrado
YESvGaN
Vertical GaN on Silicon Wide Band Gap Power at Silicon Cost
27M€
Cerrado
eleGaNt
The first high performance gallium nitride wafers for mainst...
71K€
Cerrado
LAST POWER
Large area silicon carbide substrates and heteroepitaxial Ga...
16M€
Cerrado
3C-SiC Si
Development of a new disruptive semiconductor technology to...
71K€
Cerrado
Información proyecto GreenDiamond
Duración del proyecto: 66 meses
Fecha Inicio: 2015-04-16
Fecha Fin: 2020-10-31
Fecha límite de participación
Sin fecha límite de participación.
Descripción del proyecto
The key to the efficient transmission and conversion of low-carbon electrical energy is the improvement of power electronic devices. Diamond is considered to be the ultimate wide bandgap semiconductor material for applications in high power electronics due to its exceptional thermal and electronic properties. Two recent developments - the emergence of commercially available electronic grade single crystals and a scientific breakthrough in creating a MOS channel in diamond technology, have now opened new opportunities for the fabrication and commercialisation of diamond power transistors.
These will result in substantial improvements in the performance of power electronic systems by offering higher blocking voltages, improved efficiency and reliability, as well as reduced thermal requirements thus opening the door to more efficient green electronic systems. These improvements are expected to increase the efficiency of power converters by a factor of 4, yielding a 75% reduction in losses. In this context, the objective of GreenDiamond is to fabricate a 10kV transistor in a high power package, followed by a high voltage AC/DC converter based on such devices.
To meet GreenDiamond’s challenging goals, the consortium gathers experts on power device design, diamond growth and characterization, packaging and testing as well as an innovative end-user. Most of the partners are also involved in SiC or GaN technology, allowing the project to benefit from their ample experience and achievements in wide bandgap semiconductors. As far as diamond transistor structure is concerned, unlike GaN and SiC, Europe still has a significant scientific and technological advantage over non-EU competitors. It is therefore extremely important to maintain the competitive edge that will lead the development of truly green electronics in the near to medium term future.