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GRADE

Financiado

Cerrado

Graphene based Devices and Circuits for RF Applications

GRADE is a three-year STREP proposal focused on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different co... ver más

31/03/2016

UNIVERSITAET SIEGE...

5M€

Presupuesto del proyecto: 5M€

Líder del proyecto

UNIVERSITAET SIEGEN No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Ver 12 Participantes

Financiación concedida El organismo FP7 notifico la concesión del proyecto el día 2016-03-31 No tenemos la información de la convocatoria

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Información adicional privada

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12 Participantes

UNIVERSITAET SIEGEN

0.00€ | Lider

UNIBO

N.D. | Participante

IUNET

N.D. | Participante

CNRS

N.D. | Participante

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Líder del proyecto

UNIVERSITAET SIEGEN No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 5M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto GRADE is a three-year STREP proposal focused on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. Graphene field effect transistors (GFET) use graphene as a high-mobility transistor channel. Alternative "graphene base transistors" (GBT) are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfill this requirement. The proposed research enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing.To achieve these goals, GRADE unites a powerful consortium:Four academic partners, two of them with a strong experimental background and excellent processing facilities, one focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design.One research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing.One global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.

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