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GaN4AP

Financiado

Cerrado

GaN for Advanced Power Applications

GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power elect... ver más

31/08/2025

DTSMNS

62M€

Presupuesto del proyecto: 62M€

Líder del proyecto

DISTRETTO TECNOLOGICO SICILIA MICROE NANO SIS... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Ver 46 Participantes

Financiación concedida El organismo H2020 notifico la concesión del proyecto el día 2021-05-12

ECSEL-2020-1-IA: ECSEL-IA

I+D

Cerrada hace 4 años

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Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

46 Participantes

DTSMNS

1.52M€ | Lider

UNICAL

N.D. | Participante

LUH

229.58K€ | Participante

759.01K€ | Participante

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Duración del proyecto: 51 meses Fecha Inicio: 2021-05-12
Fecha Fin: 2025-08-31

Líder del proyecto

DISTRETTO TECNOLOGICO SICILIA MICROE NANO SIS... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 62M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems. GaN4AP project will… 1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99% power conversion efficiency. 2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors. 3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems. 4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state of the art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge. The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.

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