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F2GO

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Fluorides for 2D Next-Generation Nanoelectronics

The IRDS roadmap considers two-dimensional (2D) materials a promising option for scaling electronic devices down to atomic dimensions. While there has been a lot of progress regarding 2D semiconductors, all electronic devices requ... ver más

31/08/2027

TU WIEN

2M€

Presupuesto del proyecto: 2M€

Líder del proyecto

TECHNISCHE UNIVERSITAET WIEN No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Financiación concedida El organismo HORIZON EUROPE notifico la concesión del proyecto el día 2022-08-30

ERC-2021-ADG: ERC ADVANCED GRANTS Scope:Objectives

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Este proyecto no cuenta con búsquedas de partenariado abiertas en este momento.

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1 Participantes

TU WIEN

2.50M€ | Lider

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Duración del proyecto: 60 meses Fecha Inicio: 2022-08-30
Fecha Fin: 2027-08-31

Líder del proyecto

TECHNISCHE UNIVERSITAET WIEN No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 2M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto The IRDS roadmap considers two-dimensional (2D) materials a promising option for scaling electronic devices down to atomic dimensions. While there has been a lot of progress regarding 2D semiconductors, all electronic devices require suitable insulators as well. Although a major show-stopper, insulators have received far less attention and their is no clear roadmap as to which insulators can be used for ultimately scaled nanoelectronics. My group was recently first to demonstrate back-gated 2D FETs using ultrathin calcium fluoride (CaF2) as an insulator. Based on these promising results, I firmly believe that fluorides, which are ionic crystals with often very wide bandgaps, can efficiently address the major challenges: (i) Although relatively exotic materials, their growth is considerably better established than that of any 2D material. (ii) CaF2 can be epitaxially grown layer-by-layer on silicon substrates and likely also on 2D semiconductors. As their F-terminated inert surface supports van der Waals epitaxy of 2D materials, they could be the missing link between 3D substrates and 2D semiconductors. (iii) The low-defectivity of the inert CaF2 surface will significantly improve device performance and stability. Thereby, fluorides will allow novel 2D devices to make the leap from promising concepts to highly performant and stable real devices. F2GO will establish fluorides as a key enabler for 2D nanoelectronics by successfully demonstrating device architectures which were previously impossible to fabricate with sufficient performance due to inadequate insulators. I will do so by investigating selected fluoride-based devices for key technologies: (i) steep slope devices for CMOS logic (Cold Source FETs) at the ultimate scaling limit to allow sub-100 mV operation and (ii) ultra-scaled non-volatile memory devices (Flash and TRAM). Thereby, F2GO will pave the way for fluoride-based nanoelectronics at the ultimate scaling limit as required for the generations 2030+.

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