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Energy Efficient Embedded Non volatile Memory Logic based on Ferroelectric Hf Z...

Energy Efficient Embedded Non volatile Memory Logic based on Ferroelectric Hf Zr O2 Edge computing requires highly energy efficient microprocessor units (MCU) with embedded non-volatile memories (eNVM) to process data at the source that is the IoT sensor node. eFLASH technology is limited by low write speed, high... ver más

30/06/2021

CEA

4M€

Presupuesto del proyecto: 4M€

Líder del proyecto

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENER... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Ver 10 Participantes

Financiación concedida El organismo H2020 notifico la concesión del proyecto el día 2021-06-30

ICT-31-2017: Micro- and nanoelectronics technolo...

I+D

Cerrada hace 7 años

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Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

10 Participantes

CEA

1.46M€ | Lider

Laboratoire d’Ecologie des H...

357.44K€ | Participante

EPFL

367.00K€ | Participante

INCDFM

310.13K€ | Participante

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Duración del proyecto: 43 meses Fecha Inicio: 2017-10-31
Fecha Fin: 2021-06-30

Líder del proyecto

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENER... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 4M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto Edge computing requires highly energy efficient microprocessor units (MCU) with embedded non-volatile memories (eNVM) to process data at the source that is the IoT sensor node. eFLASH technology is limited by low write speed, high power and low endurance. Alternative fast, low power and high endurance eNVM could greatly enhance energy efficiency and allow flexibility for finer grain of logic and memory. FeRAM has the highest endurance of all emerging NVMs. However, perovskite-based eFeRAM is incompatible with Si CMOS, does not easily scale and has manufacturability and cost issues. We introduce new ferroelectric material Hf(Zr)O2 to make FeRAM competitive NVM candidate for IoT. HfO2 compatibility with Si processing will facilitate integration, improve manufacturability and allow better scaling. Different cell architectures based on capacitors or ferroelectric FETs will give unprecedented flexibility for fine-grained logic –in-memory (LiM) circuits, which allows data storage close to logic circuits, reduces energy cost of data transfer and allows smart gating for normally-off computing. The project is built around four objectives: i) Optimization of Materials, ii) LiM design & architecture, iii) Integration of Hf(Zr)O2-based NVM arrays, iv) Memory test & validation & benchmarking. The work calls on the full spectrum of expertise from advanced materials synthesis and characterization, processing, design and integration and benchmarking to make substantial progress towards a truly disruptive energy efficient memory and logic technology. A team of 8 partners, including a major European semiconductor company, the leader in the field of ferroelectric HfO2 and a large technology laboratory, originating from 5 EU states, will join forces to deliver experimental demonstrators creating the opportunity for the EU industry to establish a dominant position in IoT innovative components market and make an impact on the future roadmap for embedded systems and applications.

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