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E2COGAN

Financiado

Energy Efficient Converters using GaN Power Devices

The E2COGaN project will target the demonstration of GaN-on-Si as a disruptive power device technology platform through the whole value chain up to demonstrators with high industrial, societal and environmental relevance. Its inno... ver más

31/03/2016

BelGaN

26M€

Presupuesto del proyecto: 26M€

Líder del proyecto

BELGAN BV No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Ver 20 Participantes

Financiación concedida El organismo FP6 notifico la concesión del proyecto el día 2016-03-31 No tenemos la información de la convocatoria

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20 Participantes

BelGaN

Lider

STUBA

N.D. | Participante

NANODESIGN

N.D. | Participante

CISC

N.D. | Participante

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Duración del proyecto: 35 meses Fecha Inicio: 2013-04-01
Fecha Fin: 2016-03-31

Líder del proyecto

BELGAN BV No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 26M€

Descripción del proyecto The E2COGaN project will target the demonstration of GaN-on-Si as a disruptive power device technology platform through the whole value chain up to demonstrators with high industrial, societal and environmental relevance. Its innovative character will be proven through a well-balanced and application specific trade-off between the corner” benefits given by higher efficiency, higher switching frequency, smaller footprint and weight and competitive cost on system level with respect to Si or SiC. The consortium comprises the whole GaN power electronics value chain from the substrate provider, device manufacturer, assembly house to the end user, completed by top academic institutes, tool and service providers. The plan is to start with 600V, 10A GaN devices and gradually explore higher voltages (up to 1500V) and currents (up to 100A) towards the end of the project, giving priority to the early exploration of applications below 10kW. Special attention will be paid on the control of reliability issues and parasitic effects on device and module level - especially regarding high frequency and high temperature operation - and the choice of the best suitable gate drivers. Finally, the main project demonstrators will focus on two application domains with strategic relevance: first, on photovoltaic where the use of GaN will be explored in micro-grid interfacing circuits and, second, on automotive, where the benefit of GaN will be investigated in grid-connected chargers for high voltage batteries, as found in new hybrid and full electric vehicles. These demonstrators should prove the potential of the GaN power devices through a gain in efficiency, weight, footprint, heat management ease and overall system cost. Moreover, the project will include a pre-study in Aeronautics with specific high temperature (250°C) and high radiation mission profiles.

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