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Development of low cost technologies for the fabrication of high performance tel...

Development of low cost technologies for the fabrication of high performance telecommunication lasers The "Development of low-cost technologies for the fabrication of high-performance telecommunication lasers" project has two main objectives: (1) Development of high-performance surface-grating-based DFB/DBR telecommunication l... see more

31/07/2012

TUT

5M€

Project Budget: 5M€

Project leader

TTYSAATIO No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

PARTICIPATION DEPralty Sin fecha límite de participación.

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Financing granted El organismo FP7 notifico la concesión del proyecto The day 2012-07-31 We do not have the information of the call

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9 Participantes

TUT

0.00€ | Leader

IIIV LAB

N.D. | participant

TECHNION ISRAEL INSTITUTE O...

N.D. | participant

PWR

N.D. | participant

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Project leader

TTYSAATIO No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Project Budget 5M€

participation deadline Sin fecha límite de participación.

Project description The "Development of low-cost technologies for the fabrication of high-performance telecommunication lasers" project has two main objectives: (1) Development of high-performance surface-grating-based DFB/DBR telecommunication lasers (2) Development of ultra-high speed directly modulated lasers (> 40 GBit/s) with a simplified multi-section design, which exploit high-order photonic resonances for extending the modulation bandwidth. The project approach is to develop a common technological fabrication platform for both types of lasers based on surface gratings and other surface micro- and nano-structures. One important advantage in using surface structuring for increasing the performances and functionality of edge-emitting lasers is the elimination of the regrowth stage, which adds to the fabrication cost, affects the laser performances (notably the reliability and the characteristics shift in time) and reduces yield. The surface micro- and nano-structures will be imprinted by the low-cost and high-yield nanoimprint lithography, which will contribute to reducing the fabrication cost. The developed surface-oriented technology will be largely independent on the underlying semiconductor structure and will be applied for the fabrication of InP- and GaAs-based edge-emitting lasers (EELs) working in the 1300 and 1550 nm ranges. Although advanced materials (like dilute nitrides and antimony-containing dilute-nitrides) as well as low-dimensional structures (quantum dots and quantum dashes) will be investigated for developing the active regions of the lasers, the surface-oriented technology will be directly applicable to epitaxial layer structures already developed and tested in regular Fabry-Perot telecommunication EELs. Thus the developed surface-oriented approach will have the unique advantage of enabling the fabrication of higher-performance lasers from already tested and qualified 'legacy' epiwafers.

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