AGATE
Financiado
DEVELOPMENT OF ADVANCED GAN TECHNOLOGIES
According to the High-Level Experts Group (HLG) micro and nanoelectronics are essential for all goods and services which need intelligent control in all innovative sectors and are therefore identified as Key Enabling Technologies...
According to the High-Level Experts Group (HLG) micro and nanoelectronics are essential for all goods and services which need intelligent control in all innovative sectors and are therefore identified as Key Enabling Technologies (KET). Gallium Nitride is an advanced semiconductor material at the heart of three strategic issues, advanced materials, photonics and micro/nanoelectronics. The deployment of these technologies is key for Europe to strengthen its manufacturing capacities while addressing societal challenges on energy and transportation.The main goal of the AGATE project is to implement an industrial European source of engineered substrates and epitaxial structures for GaN electronic devices, and to validate the substrate performances on high performance GaN devices.
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Duración del proyecto: 35 meses
Fecha Inicio: 2013-04-01
Fecha Fin: 2016-03-31
Fecha Fin: 2016-03-31
Línea de financiación: concedida
El organismo FP6 notifico la concesión del proyecto el día 2016-03-31
Presupuesto
El presupuesto total del proyecto asciende a
60M€
Líder del proyecto
SOITEC SA
No se ha especificado una descripción o un objeto social para esta compañía.
Perfil tecnológico
TRL
4-5
Perfil tecnológico
TRL
4-5
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Participante
N.D. |
Participante