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LEON

Financiado

Compact THz lasers based on graphene quantum dots

The ambition of this project is to open new horizons in the field of graphene-based devices for THz technology. The major objective is to develop compact THz amplifiers and lasers operating at room temperature, analogous to the co... ver más

31/08/2025

CNRS

2M€

Presupuesto del proyecto: 2M€

Líder del proyecto

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Ver 2 Participantes

Financiación concedida El organismo H2020 notifico la concesión del proyecto el día 2019-01-14

Línea de financiación objetivo El proyecto se financió a través de la siguiente ayuda:

ERC-2018-COG: ERC Consolidator Grant

I+D

Cerrada hace 6 años

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2 Participantes

CNRS

2.00M€ | Lider

RAMONDIN CAPSULAS

481.26K€ | Participante

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Últimas noticias

29-11-2024: IDAE En las últimas 48 horas el Organismo IDAE ha otorgado 4 concesiones

29-11-2024: ECE En las últimas 48 horas el Organismo ECE ha otorgado 2 concesiones

29-11-2024: CMVAMADRID En las últimas 48 horas el Organismo CMVAMADRID ha otorgado 37 concesiones

Duración del proyecto: 79 meses Fecha Inicio: 2019-01-14
Fecha Fin: 2025-08-31

Presupuesto del proyecto 2M€

Descripción del proyecto The ambition of this project is to open new horizons in the field of graphene-based devices for THz technology. The major objective is to develop compact THz amplifiers and lasers operating at room temperature, analogous to the concept of semiconductor lasers in the visible and telecom wavelength range. THz radiation is extremely attractive for fundamental investigations of matter and emerging applications including, for example, security screening, medical imaging and spectroscopy. However, the THz spectral range remains one of the least exploited spectral regions, mainly due to the lack of compact powerful sources. The development of the typical semiconductor-laser scheme emitting at THz frequencies has been seriously hampered by the absence of an appropriate material with a sufficiently small bandgap. The LEON project addresses this technological and scientific blocking point with new semiconductor-laser schemes for THz emission centered on the integration of graphene-based materials. Indeed, graphene is potentially an excellent candidate for a THz semiconductor-laser model owing to its ‘zero’ bandgap. However, non-radiative recombination mechanisms, especially Auger recombination, reduce the lifetime of the optical gain to few hundreds of femtoseconds. This phenomenon drastically limits the feasibility of a THz laser. In order to suppress these detrimental non-radiative processes, a new concept is needed. The project proposes to exploit the full discretization of electronic states in graphene quantum dots. This high-risk high-gain project will provide important and far-reaching scientific advances, which cannot be achieved with the current state-of-the-art approaches. This project has three major cornerstones: i) the demonstration of THz amplifiers based on graphene quantum dots, ii) the demonstration of THz lasers based on graphene quantum dots in a microcavity, iii) the exploitation of these THz amplifiers/lasers for security and communication applications.

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