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MAGICAL

Financiado

Cerrado

CMOS magnetoelectronic Integrated Circuits wil Multifunctional Capabilities

Spin Transfer Torque Magnetic memories (STT-MRAM) are receiving a growing R&D effort within the microelectronic industry aiming at the replacement of DRAM or SRAM at sub-20nm nodes. MAGICAL seeks to significantly innovate through... ver más

31/10/2021

CEA

3M€

Presupuesto del proyecto: 3M€

Líder del proyecto

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENER... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Ver 3 Participantes

Financiación concedida El organismo H2020 notifico la concesión del proyecto el día 2021-10-31

ERC-ADG-2014: ERC Advanced Grant

I+D

Cerrada hace 10 años

0% 100% 100%

Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

3 Participantes

CEA

2.50M€ | Lider

ADM WILD VALENCIA

1.14M€ | Participante

CNRS

176.41K€ | Participante

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Duración del proyecto: 72 meses Fecha Inicio: 2015-10-22
Fecha Fin: 2021-10-31

Líder del proyecto

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENER... No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 3M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto Spin Transfer Torque Magnetic memories (STT-MRAM) are receiving a growing R&D effort within the microelectronic industry aiming at the replacement of DRAM or SRAM at sub-20nm nodes. MAGICAL seeks to significantly innovate through groundbreaking advances in ultra-low power multifunctional systems based on hybrid CMOS/magnetic technology. With the development of portable electronics and of the Internet of Things (IOT), more and more functions must be embedded on chips: logic/memory, sensing, communication, etc. The current hurdles with today's technology are power consumption, communication bandwidth, processing/ packaging costs. MAGICAL will demonstrate that these limitations can be largely overcome through hybrid CMOS/magnetic technology. The project will follow three main goals: - Firstly, we will strengthen the STT-MRAM technology by investigating two novel ideas aiming at solving two remaining difficulties in sub-20nm STT-MRAM development: the nanostructuration of magnetic tunnel junctions and the long-term data retention. This will open the path to high density (>Gbit) STT-MRAM. -Secondly, we will demonstrate that Digital, analog (3D magnetic field sensing for orientation sensor), RF communication functions can be realized with the same baseline technology as the one developed for STT-MRAM. As a result, these three types of functions can be homogeneously integrated in a single chip, a major improvement compared to conventional heterogeneous integration. The prime benefits expected from MAGICAL are: ultralow power thanks to MRAM non volatility and on-chip computation capability, greatly improved communication functionalities (cloud as well as intrachip communication), reduced process/packaging costs. -Thirdly, through various actions, MAGICAL will aim at narrowing the cultural gap that still exists between magnetism and microelectronics communities. The project could definitely help the European microelectronic systems industry improve its leadership position.

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