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AL-IN-WON

Financiado

Cerrado

AlGaN and InAlN based microwave components

This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected. AL-IN-WON will explore t... ver más

30/04/2014

UMS

3M€

Presupuesto del proyecto: 3M€

Líder del proyecto

UNITED MONOLITHIC SEMICONDUCTORS SAS No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Fecha límite participación Sin fecha límite de participación.

Ver 7 Participantes

Financiación concedida El organismo FP7 notifico la concesión del proyecto el día 2014-04-30 No tenemos la información de la convocatoria

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Información adicional privada

No hay información privada compartida para este proyecto. Habla con el coordinador.

7 Participantes

UMS

0.00€ | Lider

THALES ALENIA SPACE FRANCE

N.D. | Participante

IIIV LAB

N.D. | Participante

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Líder del proyecto

UNITED MONOLITHIC SEMICONDUCTORS SAS No se ha especificado una descripción o un objeto social para esta compañía.

TRL 4-5

Presupuesto del proyecto 3M€

Fecha límite de participación Sin fecha límite de participación.

Descripción del proyecto This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected. AL-IN-WON will explore two main disrupting routes: - Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability. - High efficiency / High Power generation in Ku / Ka bands It proposes to evaluate in 2 phases next generation of WBG material up to Ka Band. The InAlN/GaN heterostructure offers the following advantages:  As InAlN/GaN is lattice matched, it offer the possibility to growth very thin layer in the range of 10nm or below WHICH IS THE MOST RELEVANT to overcome short channel effect AND GO TOWARDS HIGH frequency range up to millimeter wave range.  In0.18 Al0.82N /GaN is a new heterostructure able to give twice the drain current available from a more conventional AlGaN/GaN heterostructure. Breakdown voltage is comparable for the two heterostructures.  In0.18 Al0.82N is latticed matched to GaN and higher reliability is therefore expected compared to AlGaN/GaN.  Passivation is currently a major limitation to device operation. InAlN/GaN MOSHEMT are very promising with strong current drain improvement compared to HEMT (UltraGaN). We plan to evaluate CW Ku and Ka Band MMIC High Power Amplifiers (HPA) and Low Noise Amplifiers (LNA). Demonstrators in Ka band will be designed based on devices coming from the run 2. The final objective being the evaluation of InAlN/GaN compared to more conventional AlGaN/GaN very high power HEMT technology with very high breakdown voltage, high current and compliant with high power density. Regarding space application for which reliability and robustness are of major concerns, we expect to demonstrate the major breakthrough offered by GaN technology, and especially InAlN if successful.

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